Structure and electrical resistance of the passivating ZnSe layer on Ge

In this article, we have considered the p-i-n Ge photodetector with ZnSe passivating layer. Passivation layer needs to be protected from dust, rain drops and other external influences. However, passivation can cause errors in image. When creating a on Ge, which is used photodetectors, found two additional phases GeSe GeSe2 that do not contradict their state diagram. The above an essential effect performances of Therefore, study electrical resistance layer, prepared model samples layers containing thickness 0.5…1.8 µm area 1 cm2. To measure these layers, elastic contacts. performed measurements shown Se intermediate between pure and, therefore, practically does worsen properties Ge.